InGaAs/InP superlattice waveguides by elevated temperature argon ion mixing

Optical waveguides fabricated by argon ion mixing in InGaAs/InP superlattice structures grown by low-pressure metalorganic chemical vapor deposition are demonstrated for the first time. Implantation of argon ions at ∼400 °C eliminates the need for a high-temperature post-anneal to induce the composi...

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Bibliographic Details
Published in:Applied physics letters 1989-11, Vol.55 (19), p.2020-2022
Main Authors: XIA, W, LIN, S. C, PAPPERT, S. A, HEWETT, C. A, FERNANDES, M, VU, T. T, YU, P. K. L, LAU, S. S
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
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Summary:Optical waveguides fabricated by argon ion mixing in InGaAs/InP superlattice structures grown by low-pressure metalorganic chemical vapor deposition are demonstrated for the first time. Implantation of argon ions at ∼400 °C eliminates the need for a high-temperature post-anneal to induce the compositional disordering. As-grown and argon-implanted samples were studied using x-ray diffraction and optical absorption measurements. Planar buried rib waveguides operating at a 1.5 μm wavelength are fabricated by selective ion implantation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102150