Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures

We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic ch...

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Bibliographic Details
Published in:IEEE transactions on magnetics 1999-09, Vol.35 (5), p.2820-2825
Main Authors: Boeve, H., Bruynseraede, C., Das, J., Dessein, K., Borghs, G., De Boeck, J., Sousa, R.C., Melo, L.V., Freitas, P.P.
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Applied sciences
Conductors
Electronics
Exact sciences and technology
Hall effect devices
Magnetic anisotropy
Magnetic devices
Magnetic semiconductors
Magnetic separation
Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.)
domain-motion devices, etc
Nonvolatile memory
Perpendicular magnetic anisotropy
Random access memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic characteristics and absolute resistance. Secondly, the design of the read-out electronics is a key issue. A third determining factor is the technology in which the electronics are fabricated. Some features are indicated that are essential in optimizing MRAM in future.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.800992