Narrow channel Si-MOSFETs for electron transport studies

We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports...

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Bibliographic Details
Published in:Microelectronic engineering 1989, Vol.9 (1), p.373-376
Main Authors: Gao, J.R., Caro, J., Verbruggen, A.H., Radelaar, S., Middelhoek, J.
Format: Article
Language:English
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Summary:We have fabricated narrow channel Si-MOSFETs for electron transport studies at low temperature. The fabrication process combines optical lithography for large structures and high resolution e-beam lithography for narrow gates. The smallest working devices have a 0.14 μm wide gate. This paper reports the fabrication process and gives some examples of the quantum transport phenomena observed in these devices.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(89)90082-8