Integrated interferometric injection laser: novel fast and broad-band tunable monolithic light source

A wide-range electronically wavelength-tunable InGaAsP-InP laser has been developed. This monolithic single-mode light source is based on interferometric principles. The authors report on successful fabrication and first experimental device characteristics obtained with these novel Y-coupled-cavity...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1991-06, Vol.27 (6), p.1616-1624
Main Authors: Schilling, M., Idler, W., Kuhn, E., Laube, G., Schweizer, H., Wunstel, K., Hildebrand, O.
Format: Article
Language:English
Subjects:
426002 - Engineering- Lasers & Masers- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
DATA
Distributed feedback devices
ELECTRONIC CIRCUITS
EMISSION
ENERGY-LEVEL TRANSITIONS
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Frequency division multiplexing
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
High speed optical techniques
INDIUM ARSENIDES
INDIUM COMPOUNDS
Indium phosphide
INDIUM PHOSPHIDES
INFORMATION
INTEGRATED CIRCUITS
INTERFEROMETRY
LASER CAVITIES
Laser tuning
LASERS
LIGHT SOURCES
MICROELECTRONIC CIRCUITS
MODE CONTROL
NUMERICAL DATA
Optical interferometry
Optical tuning
Optics
PHOSPHIDES
PHOSPHORUS COMPOUNDS
Physics
PNICTIDES
QUANTUM ELECTRONICS
RADIATION SOURCES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SOLID STATE LASERS
STIMULATED EMISSION
Tunable circuits and devices
WAVELENGTHS
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Description
Summary:A wide-range electronically wavelength-tunable InGaAsP-InP laser has been developed. This monolithic single-mode light source is based on interferometric principles. The authors report on successful fabrication and first experimental device characteristics obtained with these novel Y-coupled-cavity integrated interferometric injection lasers. For both the 1300 and 1500 nm wavelength regions, very large tuning ranges for 22 and 23 nm. respectively, were achieved by proper current adjustment. The minimum achieved linewidth of the nonoptimized devices is 35 MHz. Within the complete tuning range, the selection of 12 individual single-mode channels spaced by 2 nm is demonstrated with high-modulation bandwidths up to 5 GHz. A preliminary test of the wavelength switching behavior between two individual single modes indicates promising high-speed switching capabilities in the gigahertz range.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.89985