Antireflection coatings for advanced semiconductor device metallization using laser reflow and chemical mechanical planarization

We have investigated titanium tungsten (TiW), titanium nitride (TiN), and chemical vapor deposited (CVD) tungsten (W) films as antireflection coatings (ARC) on aluminum (Al) alloy films to widen the laser planarization process window for contact via filling. ARCs lowered the minimum laser fluence re...

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Bibliographic Details
Published in:Applied physics letters 1991-10, Vol.59 (16), p.1978-1980
Main Authors: YU, C, SANDHU, G. S, DOAN, T. T
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Metals. Metallurgy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:We have investigated titanium tungsten (TiW), titanium nitride (TiN), and chemical vapor deposited (CVD) tungsten (W) films as antireflection coatings (ARC) on aluminum (Al) alloy films to widen the laser planarization process window for contact via filling. ARCs lowered the minimum laser fluence required to accomplish complete contact filling and the maximum laser fluence before the onset of optical ablation, resulting in a significant increase in the process window. This increase closely correlated with the optical and thermal properties of the ARCs. The observed increase in resistivity of laser processed Al films due to intermixing with the ARCs does not preclude its use as via stud metal. A newly developed Al plug technology utilizing chemical mechanical polishing to remove the laser processed film from the surface is presented.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106155