A new concept silicon homojunction infrared sensor

A new silicon photovoltaic infrared sensor is proposed. Its basic operational principle is demonstrated. The sensor consists of three regions with a homojunction structure, having a flexibly designed barrier height corresponding to the cutoff wavelength. The operation of the sensor is based on infra...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-05, Vol.38 (5), p.1136-1140
Main Authors: Tohyama, S., Teranishi, N., Konuma, K., Nishimura, M., Arai, K., Oda, E.
Format: Article
Language:English
Subjects:
Applied sciences
Electromagnetic wave absorption
Electronics
Exact sciences and technology
Hot carriers
Imaging devices
Infrared detectors
Infrared image sensors
Infrared sensors
Photovoltaic systems
Schottky barriers
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Solar power generation
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Summary:A new silicon photovoltaic infrared sensor is proposed. Its basic operational principle is demonstrated. The sensor consists of three regions with a homojunction structure, having a flexibly designed barrier height corresponding to the cutoff wavelength. The operation of the sensor is based on infrared absorption and internal photoemission by free electrons in a conduction band in degenerate n/sup ++/-type silicon. The fabricated sensors have verified the basic operational principle and have shown that the detectable wavelength range extends to over 12 mu m.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.78390