New negative differential resistance effects in the negative resistance field-effect transistor

We report two new effects of negative differential resistance in the modulation-doped AlGaAs/GaAs negative resistance field-effect transistor. Both effects are well controlled by a third electrode. Presence of a top n+ AlGaAs layer causes a hot-electron real-space transfer to this layer, and prevent...

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Bibliographic Details
Published in:Journal of applied physics 1989-09, Vol.66 (5), p.2186-2188
Main Authors: KASTALSKY, A, MILSHTEIN, M, SHANTHARAMA, L. G, HARBISON, J, FLOREZ, L
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:We report two new effects of negative differential resistance in the modulation-doped AlGaAs/GaAs negative resistance field-effect transistor. Both effects are well controlled by a third electrode. Presence of a top n+ AlGaAs layer causes a hot-electron real-space transfer to this layer, and prevents the electron transfer to the collector. Creation of the high-field domain in the source-drain channel is needed to activate the hot-electron injection to the collector. The real-space transfer to the top n+AlGaAs layer, combined with the quenching of the high-field domain by the collector bias, are responsible for the appearance of the observed new negative differential resistance effects.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.344316