Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

Modulated photoreflectance is used to measure the unintentional impurity concentrations in undoped epitaxial GaAs. A photoreflectance signal above the band gap spreads with the unintentional impurity concentrations and shows well-defined Franz–Keldysh peaks whose separation provide a good measure of...

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Bibliographic Details
Published in:Journal of applied physics 1989-07, Vol.66 (1), p.156-160
Main Authors: SYDOR, M, ANGELO, J, MITCHEL, W, HAAS, T. W, MING-YUAN YEN
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Infrared and raman spectra and scattering
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
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Summary:Modulated photoreflectance is used to measure the unintentional impurity concentrations in undoped epitaxial GaAs. A photoreflectance signal above the band gap spreads with the unintentional impurity concentrations and shows well-defined Franz–Keldysh peaks whose separation provide a good measure of the current carrier concentrations. In samples less than 3 μm thick, a photoreflectance signal at the band edge contains a substrate-epilayer interface effect which precludes the analysis of the data by using the customary third derivative functional fits for low electric fields.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.343896