Patterning and characterization of large-area quantum wire arrays

Large-area arrays of parallel quantum wires of 30–80 nm width are achieved using a combination of x-ray lithography, wet chemical etching, and low-pressure metalorganic vapor phase epitaxy. The quantum wires are characterized using low-temperature photoluminescence and magnetotransport measurements....

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Bibliographic Details
Published in:Applied physics letters 1991-04, Vol.58 (14), p.1539-1541
Main Authors: Ismail, K., Burkhardt, M., Smith, Henry I., Karam, N. H., Sekula-Moise, P. A.
Format: Article
Language:English
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Summary:Large-area arrays of parallel quantum wires of 30–80 nm width are achieved using a combination of x-ray lithography, wet chemical etching, and low-pressure metalorganic vapor phase epitaxy. The quantum wires are characterized using low-temperature photoluminescence and magnetotransport measurements. The quantum confinement is reflected in a clear blue shift in the luminescence peak, and in deviation from the periodicity of the Shubnikov–de Haas oscillations as a function of inverse magnetic field.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105171