Quantized current in a quantum-dot turnstile using oscillating tunnel barriers

A quantized current in a lateral quantum dot, defined by metal gates in the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure, was observed. By modulating the tunnel barriers in the 2DEG with two phase- shifted RF signals and employing the Coulomb blockade of electron tunneling, q...

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Bibliographic Details
Published in:Physical review letters 1991-09, Vol.67 (12), p.1626-1629
Main Authors: KOUWENHOVEN, L. P, JOHNSON, A. T, VAN DER VAART, N. C, HARMANS, C. J. P. M, FOXON, C. T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:A quantized current in a lateral quantum dot, defined by metal gates in the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure, was observed. By modulating the tunnel barriers in the 2DEG with two phase- shifted RF signals and employing the Coulomb blockade of electron tunneling, quantized current plateaus in the current-voltage characteristics were produced at integer multiples of ef, where f is the RF frequency. This demonstrates that an integer number of electrons pass through the quantum dot each RF cycle. (Author)
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.67.1626