Patterned quantum well semiconductor laser arrays

Low-threshold arrays of GaAs/AlGaAs patterned quantum well semiconductor lasers were grown by molecular beam epitaxy on periodically corrugated substrates. Uncoated arrays of ∼14 lasers operated with threshold curents of 3.6 mA per laser and emitted up to 375 mW from a single facet under pulsed cond...

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Bibliographic Details
Published in:Applied physics letters 1989-01, Vol.54 (4), p.304-306
Main Authors: KAPON, E, HARBISON, J. P, YUN, C. P, FLOREZ, L. T
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Low-threshold arrays of GaAs/AlGaAs patterned quantum well semiconductor lasers were grown by molecular beam epitaxy on periodically corrugated substrates. Uncoated arrays of ∼14 lasers operated with threshold curents of 3.6 mA per laser and emitted up to 375 mW from a single facet under pulsed conditions. The array lasers were not phase locked because of the tight optical confinement in each array channel. A red shift of 300 Å (55 meV) was observed in the emission wavelength of the patterned array compared to that of nonpatterned lasers made on the same substrate. The red shift results from migration effects in the growth on the nonplanar surface, which leads to thicker quantum well active regions at the array channels. This effect illustrates the usefulness of the growth of quantum well heterostructures on nonplanar substrates for lateral band-gap engineering.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100994