40 GHz high-efficiency Michelson interferometer modulator on a silicon-rich nitride and thin-film lithium niobate hybrid platform

We propose and demonstrate a Michelson interferometer modulator with integrated Bragg reflectors on a silicon-rich nitride–thin-film lithium niobate hybrid platform. High-reflectivity Bragg reflectors are placed at the ends of both arms, which double the electro-optic (E-O) interaction length and re...

Full description

Saved in:
Bibliographic Details
Published in:Optics letters 2021-06, Vol.46 (12), p.2811-2814
Main Authors: Huang, Xingrui, Liu, Yang, Li, Zezheng, Guan, Huan, Wei, Qingquan, Tan, Manqing, Li, Zhiyong
Format: Article
Language:English
Subjects:
Bandwidths
Bragg reflectors
Lithium niobates
Michelson interferometers
Modulation
Modulators
Nitrides
Silicon
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose and demonstrate a Michelson interferometer modulator with integrated Bragg reflectors on a silicon-rich nitride–thin-film lithium niobate hybrid platform. High-reflectivity Bragg reflectors are placed at the ends of both arms, which double the electro-optic (E-O) interaction length and reduce the velocity mismatch between the microwave and optical wave. The presented Michelson interferometer modulator achieves a measured half-wave voltage length product as low as 1.06 V cm and high-speed modulation up to 70 Gbps. A 3-dB E-O bandwidth beyond 40 GHz is also achieved, which is, to the best of our knowledge, the highest modulation bandwidth of Michelson interferometer modulators.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.425181