Rectangular and L-shaped GaAs/AlGaAs lasers with very high quality etched facets

GaAs/AlGaAs semiconductor lasers with very high quality etched facets have been fabricated. Laser facets are formed by the chemically assisted ion beam etching technique with SiO2 as the etch mask. The threshold current densities of lasers produced with this technique are almost identical to compara...

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Bibliographic Details
Published in:Applied physics letters 1989-02, Vol.54 (6), p.493-495
Main Authors: BEHFAR-RAD, A, WONG, S. S, BALLANTYNE, J. M, SOLTZ, B. A, HARDING, C. M
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:GaAs/AlGaAs semiconductor lasers with very high quality etched facets have been fabricated. Laser facets are formed by the chemically assisted ion beam etching technique with SiO2 as the etch mask. The threshold current densities of lasers produced with this technique are almost identical to comparable lasers with one etched and one cleaved facet. L-shaped lasers, which make use of total internal reflection, have also been fabricated. The threshold current density of L-shaped lasers is similar to that of rectangular lasers with comparable cavity length.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100960