Quantum wires in InGaAs/InP fabricated by holographic photolithography

Quantum wires ≊300–400 Å wide were fabricated by holographic photolithography from a wafer having a single 100 Å InGaAs quantum well. The wires were then recoated with InP using atmospheric pressure organometallic vapor phase epitaxy, which resulted in a planar surface. A high-resolution scanning el...

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Bibliographic Details
Published in:Applied physics letters 1989-01, Vol.54 (2), p.188-190
Main Authors: MILLER, B. I, SHAHAR, A, KOREN, U, CORVINI, P. J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Quantum wires ≊300–400 Å wide were fabricated by holographic photolithography from a wafer having a single 100 Å InGaAs quantum well. The wires were then recoated with InP using atmospheric pressure organometallic vapor phase epitaxy, which resulted in a planar surface. A high-resolution scanning electron microscope showed little deterioration of the wires due to recoating. At moderate intensities ≊10 W/cm2, photoluminescence (PL) studies showed a small shift in energy (≊6 meV) and a slight line narrowing consistent with a one-dimensional structure. The quantum efficiency of the wires was comparable to the control wafer—above that expected from the fill factor of 17%. Some evidence of states below the energy gap is seen at low PL excitation, but these appear to saturate at higher excitations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101222