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Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa2Cu3O7

YBa2Cu3O7 films 2000–7500 Å thick were deposited onto [100] LaAlO3 substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4×106 A/cm2 at 77 K, transition temperatures (Tc at R=0) as high as 91 K, and the 10 GHz mi...

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Bibliographic Details
Published in:Applied physics letters 1991-07, Vol.59 (5), p.606-607
Main Authors: HISKES, R, DICAROLIS, S. A, YOUNG, J. L, LADERMAN, S. S, JACOWITZ, R. D, TABER, R. C
Format: Article
Language:English
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Summary:YBa2Cu3O7 films 2000–7500 Å thick were deposited onto [100] LaAlO3 substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4×106 A/cm2 at 77 K, transition temperatures (Tc at R=0) as high as 91 K, and the 10 GHz microwave surface resistance Rs as low as 40 μΩ at 4.2 K and 400 μΩ at 77 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105400