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Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa2Cu3O7
YBa2Cu3O7 films 2000–7500 Å thick were deposited onto [100] LaAlO3 substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4×106 A/cm2 at 77 K, transition temperatures (Tc at R=0) as high as 91 K, and the 10 GHz mi...
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Published in: | Applied physics letters 1991-07, Vol.59 (5), p.606-607 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | YBa2Cu3O7 films 2000–7500 Å thick were deposited onto [100] LaAlO3 substrates using a novel single source metalorganic chemical vapor deposition technique. We have so far observed critical currents as high as 4×106 A/cm2 at 77 K, transition temperatures (Tc at R=0) as high as 91 K, and the 10 GHz microwave surface resistance Rs as low as 40 μΩ at 4.2 K and 400 μΩ at 77 K. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.105400 |