Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARs

This report presents the first demonstration of passive RF comb filters made using epitaxial GaN/NbN/SiC high overtone bulk acoustic resonators (epi-HBARs). The two-port device is fabricated on electronic-grade GaN, electrically transduced, and acoustically coupled. The multi-mode epi-HBAR comb filt...

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Bibliographic Details
Published in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2021-11, Vol.68 (11), p.3406-3414
Main Authors: Gokhale, Vikrant J., Downey, Brian P., Roussos, Jason A., Katzer, D. Scott, Meyer, David J.
Format: Article
Language:English
Subjects:
Acoustic materials
acoustic signal processing
Acoustics
Bulk acoustic wave devices
cavity resonators
Comb filters
Continuous radiation
Coupled modes
epitaxial layers
Figure of merit
filters
gallium nitride
Gallium nitrides
harmonic filter
intermodulation distortion
linearity microelectromechanical (MEMS) devices
Microwave filters
Niobium nitride
Passband
piezoelectric transducers
Power harmonic filters
Remote sensing
Resonator filters
Room temperature
Signal processing
silicon carbide
Substrates
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Summary:This report presents the first demonstration of passive RF comb filters made using epitaxial GaN/NbN/SiC high overtone bulk acoustic resonators (epi-HBARs). The two-port device is fabricated on electronic-grade GaN, electrically transduced, and acoustically coupled. The multi-mode epi-HBAR comb filter demonstrated here has 158 sharp filter passbands periodically distributed between 1 and 4 GHz (L-S-bands) with a free spectral range (FSR) of 17 MHz. The individual passbands of the epi-HBAR comb filter demonstrate transmission bandwidths (BWs) up to 800 kHz, {f} {\times } {Q} values of up to 7\times 10^{{14}} Hz, and an average {k}_{ {\text {eff}}}^{ {{2}}} {\times } {Q} figure of merit of 41.2 at room temperature. The GaN/NbN/SiC epi-HBAR comb filter is capable of operating at high RF power levels, with linear and distortion-free performance seen up to at least 1 W of continuous wave (CW) power and up to at least 10 W of pulsed power. The compact epi-HBAR comb filters can be co-fabricated with GaN-based electronics and could potentially replace larger, off-chip or discrete-component comb filters. They can be used for spectrum sensing and as signal processing elements for remote sensing and pulsed radar.
ISSN:0885-3010
1525-8955
DOI:10.1109/TUFFC.2021.3090665