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Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers
Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUI...
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Published in: | Journal of applied physics 1991-11, Vol.70 (10), p.6044-6046 |
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container_end_page | 6046 |
container_issue | 10 |
container_start_page | 6044 |
container_title | Journal of applied physics |
container_volume | 70 |
creator | PING HE MCGAHAN, W. A NAFIS, S WOOLLAM, J. A SHAN, Z. S LIOU, S. H SEQUEDA, F MCDANIEL, T DO, H |
description | Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures. |
doi_str_mv | 10.1063/1.350066 |
format | article |
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A ; NAFIS, S ; WOOLLAM, J. A ; SHAN, Z. S ; LIOU, S. H ; SEQUEDA, F ; MCDANIEL, T ; DO, H</creator><creatorcontrib>PING HE ; MCGAHAN, W. A ; NAFIS, S ; WOOLLAM, J. A ; SHAN, Z. S ; LIOU, S. H ; SEQUEDA, F ; MCDANIEL, T ; DO, H</creatorcontrib><description>Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.350066</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Magnetic properties and materials ; Magnetic properties of surface, thin films and multilayers ; Metals. 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A</creatorcontrib><creatorcontrib>NAFIS, S</creatorcontrib><creatorcontrib>WOOLLAM, J. A</creatorcontrib><creatorcontrib>SHAN, Z. S</creatorcontrib><creatorcontrib>LIOU, S. H</creatorcontrib><creatorcontrib>SEQUEDA, F</creatorcontrib><creatorcontrib>MCDANIEL, T</creatorcontrib><creatorcontrib>DO, H</creatorcontrib><title>Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers</title><title>Journal of applied physics</title><description>Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Magnetic properties and materials</subject><subject>Magnetic properties of surface, thin films and multilayers</subject><subject>Metals. Metallurgy</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kFtLxDAQhYMouK6CPyEPIj7Y3UnTtM2jLN5gQUF9Luk0kUhvJqmw_97UXXwaDvOdM8wh5JLBikHO12zFBUCeH5EFg1ImhRBwTBYAKUtKWchTcub9FwBjJZcL0r2NUwja2f6Tjk57PzlNtTEaAx162ll0gw9uwjAvBkMjYBRqqvqG2j46Z3X7JyOPg3Zof2zYzexmWL8G2k1tsK3aaefPyYlRrdcXh7kkHw_375unZPvy-Ly52ybIBQsJL6AWWYNSaRR1KRtmcs3SkrEiXsNa5VI0aQlcpEUmBStFLTlgjarG1OSGL8n1Pnd0w_ekfag661G3rer1MPkqFRmPXYgI3uzB-U3vtKlGZzvldhWDau6zYtW-z4heHTKVR9Uap3q0_p8XILI8Gn4BTEF18w</recordid><startdate>19911115</startdate><enddate>19911115</enddate><creator>PING HE</creator><creator>MCGAHAN, W. A</creator><creator>NAFIS, S</creator><creator>WOOLLAM, J. A</creator><creator>SHAN, Z. S</creator><creator>LIOU, S. H</creator><creator>SEQUEDA, F</creator><creator>MCDANIEL, T</creator><creator>DO, H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19911115</creationdate><title>Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers</title><author>PING HE ; MCGAHAN, W. A ; NAFIS, S ; WOOLLAM, J. A ; SHAN, Z. S ; LIOU, S. 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H</creatorcontrib><creatorcontrib>SEQUEDA, F</creatorcontrib><creatorcontrib>MCDANIEL, T</creatorcontrib><creatorcontrib>DO, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PING HE</au><au>MCGAHAN, W. A</au><au>NAFIS, S</au><au>WOOLLAM, J. A</au><au>SHAN, Z. S</au><au>LIOU, S. H</au><au>SEQUEDA, F</au><au>MCDANIEL, T</au><au>DO, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers</atitle><jtitle>Journal of applied physics</jtitle><date>1991-11-15</date><risdate>1991</risdate><volume>70</volume><issue>10</issue><spage>6044</spage><epage>6046</epage><pages>6044-6046</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Thin Co/Pt multilayers were prepared on Si and glass substrates by sputtering with Ar pressures ranging from 2.5 to 15 mTorr. The bilayer structure of the samples was Co(3 Å)/Pt(15 Å)×17, and all samples had the easy axis of magnetization perpendicular to the sample surface as determined with a SQUID magnetometer. All samples retained the layered structure, as revealed by low-angle x-ray diffraction. In addition, diffraction peaks due to the formation of Co-Pt compounds (presumably at the interfaces between Co and Pt) were identified. The coercivity of samples changed from about 400 Oe for films deposited at low Ar sputtering pressure (2.5 mTorr) to as high as 2300 Oe for films deposited at high Ar pressure (15 mTorr). Ellipsometry and atomic force microscopy were used to study surface roughness and microstructure of samples prepared at different sputtering pressures.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.350066</doi><tpages>3</tpages></addata></record> |
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source | AIP_美国物理联合会期刊回溯(NSTL购买) |
subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Magnetic properties and materials Magnetic properties of surface, thin films and multilayers Metals. Metallurgy Physics |
title | Sputtering pressure effect on microstructure of surface and interface, and on coercivity of Co/Pt multilayers |
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