Resputtering of low-energy implanted inert gases: An angle-resolved time-of-flight study

A polycrystalline Cu target has been bombarded with 3 keV Ar ions. The time-of-flight distributions of the resputtered Ar atoms have been measured for several detection angles. The distribution show a fast and a slow (thermal) contribution. The fast contribution is ascribed to expansions of gas atom...

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Bibliographic Details
Published in:Applied surface science 1989-12, Vol.43 (1-4), p.363-368
Main Authors: Van Zwol, J., De Zwart, S.T., Busquet, C.C.A., Dieleman, J.
Format: Article
Language:English
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Summary:A polycrystalline Cu target has been bombarded with 3 keV Ar ions. The time-of-flight distributions of the resputtered Ar atoms have been measured for several detection angles. The distribution show a fast and a slow (thermal) contribution. The fast contribution is ascribed to expansions of gas atoms from bubbles. A model is proposed in which the velocity distribution after the expansion is described as a Maxwell-Boltzmann distribution on a constant flow velocity, analogous to expansion from a nozzle. Both the intensity and the shape of the TOF distributions are well described by this two-parameter model.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(89)90240-7