Surface analysis of cubic silicon carbide (001)

• Published in: Surface science 1991-02, Vol.243 (1), p.96-112
• Main Authors: Parrill, T.M, Chung, Y.W
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(91)90348-V

Cubic β-SiC(001) surfaces were cleaned in ultra-high vacuum by heating within a Si atomic flux, allowing contaminant species to desorb while continuously replenishing volatile surface Si. Using this technique, surface compositions ranging from Si-rich to Si-deficient were prepared. Surfaces were subsequently characterized using Auger electron, electron energy loss. X-ray photoelectron, and ultraviolet photoelectron spectroscopies as well as low energy electron diffraction. Data are presented for a range of surface compositions which result in formation of several reconstructions: (3 × 1), c(4 × 2), (2 × 1), c(2 × 2), and (1 × 1). Results are interpreted based on surface models which include ordered arrays of surface Si dimers for Si-rich and Si-terminated surfaces and graphite formation for Si-deficient surfaces.