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Study of the Co/Si(111) interface formation using electron energy loss spectroscopy

Electron energy loss spectroscopy (EELS) has been applied to investigate the Co/Si(111) interface formation at room temperature. The results allow to conclude that at very low coverage θ ⩽ 2 − 3 monolayers a CoSi 2-like phase is already formed. With higher coverages the topmost layer displays an ave...

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Bibliographic Details
Published in:Surface science 1991-01, Vol.241 (3), p.425-430
Main Authors: Bensaoula, A, Veuillen, J.Y, Tan, T.A.Nguyen, Derrien, J, De Crescenzi, M
Format: Article
Language:English
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Summary:Electron energy loss spectroscopy (EELS) has been applied to investigate the Co/Si(111) interface formation at room temperature. The results allow to conclude that at very low coverage θ ⩽ 2 − 3 monolayers a CoSi 2-like phase is already formed. With higher coverages the topmost layer displays an average composition richer in Co and finally for θ ⩾ 10 monolayers a film of almost pure Co is growing on top of the interface. During the interface development, an interface plasmon coupling effect has also been evidenced by the EELS technique.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(91)90102-X