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Study of the Co/Si(111) interface formation using electron energy loss spectroscopy
Electron energy loss spectroscopy (EELS) has been applied to investigate the Co/Si(111) interface formation at room temperature. The results allow to conclude that at very low coverage θ ⩽ 2 − 3 monolayers a CoSi 2-like phase is already formed. With higher coverages the topmost layer displays an ave...
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Published in: | Surface science 1991-01, Vol.241 (3), p.425-430 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Electron energy loss spectroscopy (EELS) has been applied to investigate the Co/Si(111) interface formation at room temperature. The results allow to conclude that at very low coverage θ ⩽ 2 − 3 monolayers a CoSi
2-like phase is already formed. With higher coverages the topmost layer displays an average composition richer in Co and finally for θ ⩾ 10 monolayers a film of almost pure Co is growing on top of the interface. During the interface development, an interface plasmon coupling effect has also been evidenced by the EELS technique. |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/0039-6028(91)90102-X |