Thermoelectric properties of pressure-sintered Si(0.8)Ge(0.2) thermoelectric alloys

The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle siz...

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Bibliographic Details
Published in:Journal of applied physics 1991-04, Vol.69, p.4333-4340
Main Authors: Vining, Cronin B., Laskow, William, Hanson, Jack O., Van Der Beck, Roland R., Gorsuch, Paul D.
Format: Article
Language:English
Subjects:
Solid-State Physics
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Summary:The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size; however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. (1964) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.
ISSN:0021-8979