Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both sys...

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Bibliographic Details
Published in:Applied physics letters 1991-10, Vol.59 (17), p.2118-2120
Main Authors: GARDELIS, S, RIMMER, J. S, DAWSON, P, HAMILTON, B, KUBIAK, R. A, WHALL, T. E, PARKER, E. H. C
Format: Article
Language:English
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Summary:We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106098