Over 245 mW 1.3-micron buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching technique

1.3-micron GaInAsP/InP buried ridge stripe lasers have been developed using the reactive ion beam etching process for the realization of the mesa stripe and two-step metalorganic vapor phase epitaxy technique for the layers growth. A CW output power over 245 mW has been achieved in 500- micron-long...

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Bibliographic Details
Published in:Applied physics letters 1991-07, Vol.59, p.22-24
Main Authors: Bouadma, N, Kazmierski, C, SEMO, J
Format: Article
Language:English
Online Access:Get full text
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Summary:1.3-micron GaInAsP/InP buried ridge stripe lasers have been developed using the reactive ion beam etching process for the realization of the mesa stripe and two-step metalorganic vapor phase epitaxy technique for the layers growth. A CW output power over 245 mW has been achieved in 500- micron-long lasers with front and rear facet reflectivities of 5 and 95 percent, respectively. Transverse-mode stability at high output power (100 mW) has been demonstrated. In addition, high reliability has been shown in preliminary high-power aging experiments. (Author)
ISSN:0003-6951