Evaluation of structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method by Rutherford backscattering spectroscopy

• Published in: Journal of applied physics 1989, Vol.65 (4), p.1790-1792
• Main Authors: KOBAYASHI, T, IWAKI, M, SAKAIRI, H, AONO, M, INOMATA, Y
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.343419

The structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method, in which silicon vapor from molten silicon is transported to a growth cavity made of graphite, has been evaluated by Rutherford backscattering spectroscopy (RBS) experiments in the [0001] channeling conditions using a beam of 4He+ of 1.5 MeV. The axial half-angle ψ1/2 and the minimum yield χmin in the [0001] channeling were measured to be 0.64±0.07° and 0.040±0.001, respectively. By comparing these experimental values with corresponding theoretical values (ψ1/2=0.61°, χmin=0.016), it is found that the 6H-SiC single crystal has a high structural quality with only a small amount of imperfections comparable to the detection limit of RBS (about 0.1%).