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Oxidation and Fracture Strength of High-Purity Reaction-Bonded Silicon Nitride

Reaction‐bonded Si3N4 (RBSN) made from high‐purity Si powder is unusually resistant to degradation caused by exposures to air for up to 50 h at temperatures up to 1400°C. The weight gain during oxidation of this SiH4‐originating RBSN is approximately 10 times less than conventional RBSN. Contrary to...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1989-09, Vol.72 (9), p.1675-1679
Main Authors: Haggerty, John S., Lightfoot, A., Ritter, John E., Gennari, Paul A., Nair, S. V.
Format: Article
Language:English
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Summary:Reaction‐bonded Si3N4 (RBSN) made from high‐purity Si powder is unusually resistant to degradation caused by exposures to air for up to 50 h at temperatures up to 1400°C. The weight gain during oxidation of this SiH4‐originating RBSN is approximately 10 times less than conventional RBSN. Contrary to normally observed strength degradations, room‐temperature strengths of this high‐purity, oxidized RBSN (avg = 435 MPa, max. = 668 MPa) remained at their unusually high, as‐processed levels after 1000° and 1400°C oxidizing exposures. Fracture toughness values were unaffected by oxidation (KIC= 2.3 to 2.4 MPa · m1/2). This superior oxidation resistance results from the high purity and the small diameter pore channels (0.01 to 0.06 μm) achieved in this SiH4‐originating RBSN.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1989.tb06302.x