Solution Epitaxy of Halide Perovskite Thin Single Crystals for Stable Transistors

• Published in: ACS applied materials & interfaces 2021-08, Vol.13 (31), p.37840-37848
• Main Authors: Yang, Tiebin, Jin, Chao, Qu, Jiangtao, Darvish, Amir Asadpoor, Sabatini, Randy, Zhang, Xingmo, Chen, Hansheng, Ringer, Simon P, Lakhwani, Girish, Li, Feng, Cairney, Julie, Liu, Xiaogang, Zheng, Rongkun
• Format: Article
• Language: English
• Subjects: Surfaces, Interfaces, and Applications
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c08800

Halide perovskites hold promise for energy and optoelectronic applications due to their fascinating photophysical properties and facile processing. Among various forms, epitaxial thin single crystals (TSCs) are highly desirable due to their high crystallinity, reduced defects, and easy epitaxial integration with other materials. However, a cost-effective method for obtaining TSCs with perfect epitaxial features remains elusive. Here, we demonstrate a direct epitaxial growth of high-quality all-inorganic perovskite CsPbBr3 TSCs on various substrates through a facile solution process under near-ambient conditions. Structural characterizations reveal a high-quality epitaxy between the obtained perovskite TSCs and substrates, thus leading to efficiently reduced defects. The resultant TSCs display a low trap density (∼1011 cm–3) and a long carrier lifetime (∼10.16 ns). Top-gate/top-contact transistors based on these TSCs exhibit high on/off ratios of over 105, an optimal hole mobility of 3.9 cm2 V–1 s–1, almost hysteresis-free operation, and high stability at room temperature. Such a facile approach for the high-yield production of perovskite epitaxial TSCs will enable a broad range of high-performance electronic applications.