Chemical vapor infiltration of Si sub x C sub 1 sub - sub x films for the preparation of composite materials using both organosilicon and hydrocarbon precursors

CVI of porous C fiber preforms by Si sub x C sub 1 sub - sub x was investigated using a factorial design. SiEt sub 4 was used as precursor, and C enrichment of the films was obtained by adding cumene in the gas phase. Composition of the infiltrated films differed from that of coatings grown on the o...

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Bibliographic Details
Published in:Thin solid films 1992-01, Vol.209 (1), p.52-58
Main Authors: Augullo, J M, Maury, F, Morancho, R
Format: Article
Language:English
Online Access:Get full text
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Summary:CVI of porous C fiber preforms by Si sub x C sub 1 sub - sub x was investigated using a factorial design. SiEt sub 4 was used as precursor, and C enrichment of the films was obtained by adding cumene in the gas phase. Composition of the infiltrated films differed from that of coatings grown on the outer surface of the preforms. Experimental optimization of infiltration conditions was performed from wt gain measurements and data on infiltration uniformity. Isothermal CVI conditions were applied for the growth of C-rich Si sub x C sub 1 sub - sub x interphases in the fabrication of C/SiC and SiC/SiC composite materials.
ISSN:0040-6090