Comparative Hall mobilities of ion implanted boron and implanted carbon plus boron in insulating diamond

Natural type IIa (insulating) diamonds were implanted at liquid nitrogen temperature with either boron or carbon plus boron. Van der Pauw resistivity and Hall effect measurements as a function of temperature were used to determine the effect of the implantation, in comparison with the unimplanted si...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1992-10, Vol.139 (10), p.2977-2979
Main Authors: HEWETT, C. A, DE LA HOUSSAYE, P. R, ROSER, M, ZEIDLER, J. R, WILSON, R. G
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:Natural type IIa (insulating) diamonds were implanted at liquid nitrogen temperature with either boron or carbon plus boron. Van der Pauw resistivity and Hall effect measurements as a function of temperature were used to determine the effect of the implantation, in comparison with the unimplanted side of the sample. Implantation with carbon plus boron resulted in a carrier concentration more than an order of magnitude greater than that resulting from implantation with boron alone, but with a much lower hole mobility.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2069019