Complete transient simulation of flash EEPROM devices

A two-dimensional device simulator which allows the complete transient simulation of nonvolatile memories is presented. The simulator has been derived from HFIELDS and incorporates models to account for Fowler-Nordheim tunneling, hot electron injection through silicon dioxide, and band-to-band tunne...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1992-12, Vol.39 (12), p.2750-2757
Main Authors: Keeney, S., Bez, R., Cantarelli, D., Piccinini, F., Mathewson, A., Ravazzi, L., Lombardi, C.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Capacitance
Circuit simulation
Electronics
EPROM
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Nonvolatile memory
Numerical simulation
Secondary generated hot electron injection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SPICE
Testing
Transient analysis
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Description
Summary:A two-dimensional device simulator which allows the complete transient simulation of nonvolatile memories is presented. The simulator has been derived from HFIELDS and incorporates models to account for Fowler-Nordheim tunneling, hot electron injection through silicon dioxide, and band-to-band tunneling in silicon. The physical models have been verified by comparing simulations with measurements performed on suitable test structures where good agreement has been obtained. The tool has been used to investigate flash EEPROM device scaling and to evaluate a published scaling scenario.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.168729