3D CMOS devices in recrystallized silicon

A 2 μm scale three-dimensional CMOS process has been developed which allows the fabrication of MOS devices in two independent active device layers. NMOS transistors have been fabricated in the substrate and CMOS devices, including inverters and ring oscillators, in a thin laser-recrystallized polysi...

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Bibliographic Details
Published in:Microelectronics 1990, Vol.21 (6), p.13-20
Main Authors: Buchner, R., Haberger, K., Seitz, S., Weber, J., Seegebrecht, P., van der Wel, W.
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A 2 μm scale three-dimensional CMOS process has been developed which allows the fabrication of MOS devices in two independent active device layers. NMOS transistors have been fabricated in the substrate and CMOS devices, including inverters and ring oscillators, in a thin laser-recrystallized polysilicon layer. The processing parameters were determined carefully in order to obtain a monocrystalline top layer and to avoid any damage to the underlying devices already existing.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/0026-2692(90)90031-W