E-beam methods and techniques for submicron structure diagnostics

This paper presents the bases for the voltage distribution measurement in submicron range. The correlation between sensitivity, spatial resolution, time of measurement and instrument characteristics is established. The capabilities of the voltage contrast mode is estimated, when dose of irradiation...

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Bibliographic Details
Published in:Microelectronic engineering 1990, Vol.12 (1), p.407-416
Main Authors: Kazmiruk, Vyacheslav V., Savitskaya, Tat'yana N., Stepanov, Ivan S.
Format: Article
Language:English
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Summary:This paper presents the bases for the voltage distribution measurement in submicron range. The correlation between sensitivity, spatial resolution, time of measurement and instrument characteristics is established. The capabilities of the voltage contrast mode is estimated, when dose of irradiation is limited because of radiation damage. It is shown that under this condition the sensitivity and lateral resolution are depended only on the detector quality.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(90)90054-W