Comparison of light emission from stain-etch and anodic-etch silicon films

Bright visible photoluminescence (PL) has been measured in stain-etch silicon films prepared by chemical etching in a dilute hydrofluoric and nitric acid solution. The PL emission is observed to degrade exponentially when the stain-etch films are illuminated in air (intensity decreases by 1/e over 2...

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Bibliographic Details
Published in:Applied physics letters 1992-12, Vol.61 (24), p.2896-2898
Main Authors: KIDDER, J. N, WILLIAMS, P. S, PEARSALL, T. P, SCHWARTZ, D. T, NOSHO, B. Z
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Bright visible photoluminescence (PL) has been measured in stain-etch silicon films prepared by chemical etching in a dilute hydrofluoric and nitric acid solution. The PL emission is observed to degrade exponentially when the stain-etch films are illuminated in air (intensity decreases by 1/e over 22.45 min). Anodic-etch silicon films, prepared using a novel electrochemical cell, show similar strong visible PL but a degradation rate an order of magnitude smaller. The wavelength of the PL peak for anodic-etch silicon (650–710 nm) shifts toward the blue with decreasing electrolyte HF concentration while the PL peak position of stain-etch silicon (∼650 nm) does not vary with process conditions investigated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.108041