Diffusion of gallium vacancies from low-temperature-grown GaAs

Diffusion of crystalline defects from low-temperature-grown GaAs (LT-GaAs) during annealing at 600°C has been studied. Gallium vacancies diffuse from the LT-GaAs layer into an adjacent Si doped GaAs layer, degrading the electrical characteristics of the Si-doped GaAs. An Al x Ga 1- x As ( x >0.3)...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1992-12, Vol.31 (12A), p.L1647-L1649
Main Authors: OHBU, I, TAKAHAMA, M, IMAMURA, Y
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Diffusion of crystalline defects from low-temperature-grown GaAs (LT-GaAs) during annealing at 600°C has been studied. Gallium vacancies diffuse from the LT-GaAs layer into an adjacent Si doped GaAs layer, degrading the electrical characteristics of the Si-doped GaAs. An Al x Ga 1- x As ( x >0.3) barrier inserted between the LT-GaAs and the Si-doped GaAs effectively suppresses the diffusion of gallium vacancies from the LT-GaAs.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.31.l1647