Dielectric-Base Transistor Using YBa sub 2 Cu sub 3 O sub 7--x /NdGaO sub 3 /SrTiO sub 3 Heterostructures

The fabrication and evaluation of dielectric-base transistors having high-T sub c YBa sub 2 Cu sub 3 O sub 7--x electrodes with NdGaO sub 3 low-permittivity barriers on SrTiO sub 3 high-permittivity substrates are described. The YBa sub 2 Cu sub 3 O sub 7--x /NdGaO sub 3 /SrTiO sub 3 heterostructure...

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Bibliographic Details
Published in:Journal of applied physics 1992-05, Vol.71 (10), p.5284-5286
Main Authors: Yoshida, A, Tamura, H, Takauchi, H, Imamura, T, Hasuo, S
Format: Article
Language:English
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Summary:The fabrication and evaluation of dielectric-base transistors having high-T sub c YBa sub 2 Cu sub 3 O sub 7--x electrodes with NdGaO sub 3 low-permittivity barriers on SrTiO sub 3 high-permittivity substrates are described. The YBa sub 2 Cu sub 3 O sub 7--x /NdGaO sub 3 /SrTiO sub 3 heterostructures were made by laser ablation. Nb base electrodes were sputtered on the back of the SrTiO sub 3 substrate. The device showed transistor characteristics with voltage and current gains exceeding unity at 4.2K. The collector current density was approx 10 A/cm exp 2 at a collector voltage of 20 V, four orders of magnitude larger than that obtained for devices having no artificial barriers.
ISSN:0021-8979