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Dielectric-Base Transistor Using YBa sub 2 Cu sub 3 O sub 7--x /NdGaO sub 3 /SrTiO sub 3 Heterostructures
The fabrication and evaluation of dielectric-base transistors having high-T sub c YBa sub 2 Cu sub 3 O sub 7--x electrodes with NdGaO sub 3 low-permittivity barriers on SrTiO sub 3 high-permittivity substrates are described. The YBa sub 2 Cu sub 3 O sub 7--x /NdGaO sub 3 /SrTiO sub 3 heterostructure...
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| Published in: | Journal of applied physics 1992-05, Vol.71 (10), p.5284-5286 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 5286 |
| container_issue | 10 |
| container_start_page | 5284 |
| container_title | Journal of applied physics |
| container_volume | 71 |
| creator | Yoshida, A Tamura, H Takauchi, H Imamura, T Hasuo, S |
| description | The fabrication and evaluation of dielectric-base transistors having high-T sub c YBa sub 2 Cu sub 3 O sub 7--x electrodes with NdGaO sub 3 low-permittivity barriers on SrTiO sub 3 high-permittivity substrates are described. The YBa sub 2 Cu sub 3 O sub 7--x /NdGaO sub 3 /SrTiO sub 3 heterostructures were made by laser ablation. Nb base electrodes were sputtered on the back of the SrTiO sub 3 substrate. The device showed transistor characteristics with voltage and current gains exceeding unity at 4.2K. The collector current density was approx 10 A/cm exp 2 at a collector voltage of 20 V, four orders of magnitude larger than that obtained for devices having no artificial barriers. |
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| ispartof | Journal of applied physics, 1992-05, Vol.71 (10), p.5284-5286 |
| issn | 0021-8979 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25604913 |
| source | AIP Digital Archive |
| title | Dielectric-Base Transistor Using YBa sub 2 Cu sub 3 O sub 7--x /NdGaO sub 3 /SrTiO sub 3 Heterostructures |
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