Creep of thin metallic films

Free-standing films of Al, AlSi (1%) and Cu, 1 μm thick, were prepared by chemical ablation from commercially produced metallizations deposited on Si/SiO 2 substrates. The films were tested at various temperatures and stresses in a specially designed creep apparatus. By varying temperatures and loa...

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Bibliographic Details
Published in:Vacuum 1990, Vol.41 (4), p.1287-1290
Main Authors: Brotzen, F.R., Rosenmayer, C.T., Cofer, C.G., Gale, R.J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physical properties of thin films, nonelectronic
Physics
Solid surfaces and solid-solid interfaces
Surface energy
thermodynamic properties
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Free-standing films of Al, AlSi (1%) and Cu, 1 μm thick, were prepared by chemical ablation from commercially produced metallizations deposited on Si/SiO 2 substrates. The films were tested at various temperatures and stresses in a specially designed creep apparatus. By varying temperatures and loads, the activation energies and stress dependences for secondary creep were determined. In addition, primary creep curves were generated by adding small load increments during the tests. By evaluating these curves, the activation volumes and dislocation densities were obtained.
ISSN:0042-207X
1879-2715
DOI:10.1016/0042-207X(90)93935-C