Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon

We report on micro-Raman spectroscopy studies of porous silicon which show an amorphous silicon Raman line at 480 R cm−1 from regions that emit visible photoluminescence. A Raman line corresponding to microcrystalline silicon at 510 R cm−1 is also observed. X-ray photoelectron spectroscopy data is p...

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Bibliographic Details
Published in:Applied physics letters 1992-08, Vol.61 (5), p.563-565
Main Authors: PEREZ, J. M, VILLALOBOS, J, MCNEILL, P, PRASAD, J, CHEEK, R, KELBER, J, ESTRERA, J. P, STEVENS, P. D, GLOSSER, R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:We report on micro-Raman spectroscopy studies of porous silicon which show an amorphous silicon Raman line at 480 R cm−1 from regions that emit visible photoluminescence. A Raman line corresponding to microcrystalline silicon at 510 R cm−1 is also observed. X-ray photoelectron spectroscopy data is presented which shows a high silicon-dioxide content in porous silicon consistent with an amorphous silicon phase.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107837