A detailed Raman study of porous silicon

Porous silicon layers formed on p-doped substrates with different doping levels were studied by Raman spectroscopy. The porosity of the samples varied between 36% and 65%. One set of samples had been preoxidized. The presence of nanocrystals in the porous film was clearly observed by an asymmetric b...

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Bibliographic Details
Published in:Thin solid films 1992-01, Vol.221 (1), p.27-33
Main Authors: Münder, H, Andrzejak, C, Berger, M.G, Klemradt, U, Lüth, H, Herino, R, Ligeon, M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
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Summary:Porous silicon layers formed on p-doped substrates with different doping levels were studied by Raman spectroscopy. The porosity of the samples varied between 36% and 65%. One set of samples had been preoxidized. The presence of nanocrystals in the porous film was clearly observed by an asymmetric broadening of the optical silicon phonon in the Raman spectra. The diameters of the nanocrystals were obtained by a detailed line shape analysis of the phonon Raman peak. With increasing porosity the amount of small nanocrystals increased compared with the amount of those with diameters larger than 35 Å. Furthermore, changes are observed in the multiphonon regime which are due to surface-assisted multiphonon processes which are enhanced in porous films.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(92)90791-9