Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2based ferroelectric tunnel junctions

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Bibliographic Details
Published in:Nanotechnology 2021-11, Vol.32 (48)
Main Authors: Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed
Format: Article
Language:English
Online Access:Get full text
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ISSN:1361-6528
DOI:10.1088/1361-6528/ac1ebe