Depth profiling techniques for the elemental analysis of semiconductor layers

• Published in: Vacuum 1990, Vol.40 (4), p.347-349
• Main Author: Sykes, DE
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/0042-207X(90)90090-L

A variety of analytical techniques is now available for determining the elemental profiles of semiconductor layers. These techniques mainly rely upon the sputtering process to remove material from the sample and perform the elemental analysis either by the monitoring of the emitted species or by determining the composition of the remaining surface. The type of information available from the various techniques will be discussed and the limitations of the sputtering process considered, particularly for the analysis of very thin semiconductor layers. The more established surface analysis techniques of Auger electron spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry will be compared with more-recently developed techniques using laser ablation and gas discharges for material removal and ionization. Areas of application of the various techniques will be reviewed.