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2D materials-based homogeneous transistor-memory architecture for neuromorphic hardware

In neuromorphic hardware, peripheral circuits and memories based on heterogeneous devices are generally physically separated. Thus, exploration of homogeneous devices for these components is key for improving module integration and resistance matching. Inspired by the ferroelectric proximity effect...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2021-09, Vol.373 (6561), p.1353-1358
Main Authors: Tong, Lei, Peng, Zhuiri, Lin, Runfeng, Li, Zheng, Wang, Yilun, Huang, Xinyu, Xue, Kan-Hao, Xu, Hangyu, Liu, Feng, Xia, Hui, Wang, Peng, Xu, Mingsheng, Xiong, Wei, Hu, Weida, Xu, Jianbin, Zhang, Xinliang, Ye, Lei, Miao, Xiangshui
Format: Article
Language:English
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Summary:In neuromorphic hardware, peripheral circuits and memories based on heterogeneous devices are generally physically separated. Thus, exploration of homogeneous devices for these components is key for improving module integration and resistance matching. Inspired by the ferroelectric proximity effect on two-dimensional (2D) materials, we present a tungsten diselenide–on–lithium niobate cascaded architecture as a basic device that functions as a nonlinear transistor, assisting the design of operational amplifiers for analog signal processing (ASP). This device also functions as a nonvolatile memory cell, achieving memory operating (MO) functionality. On the basis of this homogeneous architecture, we also investigated an ASP-MO integrated system for binary classification and the design of ternary content-addressable memory for potential use in neuromorphic hardware.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.abg3161