Electron beam lithography with negative tone resist for highly integrated silicon quantum bits

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Bibliographic Details
Published in:Nanotechnology 2021-11, Vol.32 (48), p.485301
Main Authors: Kato, Kimihiko, Liu, Yongxun, Murakami, Shigenori, Morita, Yukinori, Mori, Takahiro
Format: Article
Language:English
Subjects:
electron beam lithography
negative resist
proximity effect correction
quantum bit device
silicon
simulation
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ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ac201b