GaAs/AlAs quantum wells for electroabsorption modulators

We demonstrate both theoretically and experimentally that the quantum-confined Stark effect leads to larger absorption changes in GaAs/AlAs quantum wells compared to the more conventional GaAs/AlGaAs system due to the higher Γ confinement. The lower indirect valleys in AlAs do not degrade the perfor...

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Bibliographic Details
Published in:Applied physics letters 1992-06, Vol.60 (22), p.2779-2781
Main Authors: PEZEZHKI, B, LORD, S. M, BOYKIN, T. B, HARRIS, J. S
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optical processors, correlators, and modulators
Optics
Physics
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Summary:We demonstrate both theoretically and experimentally that the quantum-confined Stark effect leads to larger absorption changes in GaAs/AlAs quantum wells compared to the more conventional GaAs/AlGaAs system due to the higher Γ confinement. The lower indirect valleys in AlAs do not degrade the performance and the exciton resonance is maintained at higher-energy shifts. The improvement in exciton oscillator strength is nearly 50% with a 70-meV shift. The greater exciton strength at high fields has important applications for optical modulators and switches that operate at the long-wavelength side of the zero-bias exciton.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106874