High quality p-Cd(0.22)Hg(0.78)Te grown by liquid-phase epitaxy

The growth conditions of Cd(0.22)Hg(0.78)Te liquid-phase epitaxy are systematically studied using an open-tube horizontal slider apparatus. Each parameter was optimized, making it possible to obtain reproducibly high-quality p-Cd(0.22)Hg(0.78)Te epitaxial layers having an area of 15 x 20 sq mm with...

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Bibliographic Details
Published in:Journal of crystal growth 1992-02, Vol.117 (1-4), p.16-19
Main Authors: Takami, Akihiro, KAWAZU, ZEMPEI, Takiguchi, Tohru, Mitsui, Kotaro, Mizuguchi, Kazuo, MUROTANI, TOSHIO, Yasumura, Kenji, Kanno, Toshio, Saga, Minoru
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Language:English
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Summary:The growth conditions of Cd(0.22)Hg(0.78)Te liquid-phase epitaxy are systematically studied using an open-tube horizontal slider apparatus. Each parameter was optimized, making it possible to obtain reproducibly high-quality p-Cd(0.22)Hg(0.78)Te epitaxial layers having an area of 15 x 20 sq mm with the following characteristics: surface roughness of +/- 0.5 micron, compositional uniformity of epitaxial layer of 0.220 +/- 0.001, carrier concentration of 1 x 10 exp 16/cu cm at 77 K, and Hall mobility of 650 sq cm/V-s at 77 K. These characteristics are suitable for production of high-performance integrated detector arrays. (Author)
ISSN:0022-0248