Hysteretic, high Tc Josephson junctions using heterostructure trilayer films grown by molecular beam epitaxy

Hysteretic Josephson junctions have been fabricated by growing c-axis oriented trilayer Bi2Sr2CaCu2O8 /Bi2Sr2(Ca,Bi,Sr)7Cu8O20/ Bi2Sr2CaCu2O8 single-crystal thin films and patterning them into devices. These are believed to be the first cuprate superconductor junctions to exhibit current-voltage cha...

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Bibliographic Details
Published in:Applied physics letters 1992-05, Vol.60 (18), p.2288-2290
Main Authors: VIRSHUP, G. F, KLAUSMEIER-BROWN, M. E, BOZOVIC, I, ECKSTEIN, J. N
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Superconducting devices
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Summary:Hysteretic Josephson junctions have been fabricated by growing c-axis oriented trilayer Bi2Sr2CaCu2O8 /Bi2Sr2(Ca,Bi,Sr)7Cu8O20/ Bi2Sr2CaCu2O8 single-crystal thin films and patterning them into devices. These are believed to be the first cuprate superconductor junctions to exhibit current-voltage characteristics with substantial hysteresis. Current flow in the devices is in the vertical (c axis) direction, through an ultrathin (about 30 A) barrier layer. The current-voltage response shows large, sharp Shapiro steps under microwave illumination. (Author)
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107032