High temperature Schottky diodes with boron-doped homoepitaxial diamond base

We report the first high temperature operation of thin film diamond based semiconductor devices. Boron-doped homoepitaxial diamond films were grown by microwave plasma assisted chemical vapor deposition using insulating natural diamond substrates. The diamond nature of the films was confirmed by sev...

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Bibliographic Details
Published in:Materials research bulletin 1990, Vol.25 (1), p.129-134
Main Authors: Gildenblat, G.Sh, Grot, S.A., Hatfield, C.W., Wronski, C.R., Badzian, A.R., Badzian, T., Messier, R.
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We report the first high temperature operation of thin film diamond based semiconductor devices. Boron-doped homoepitaxial diamond films were grown by microwave plasma assisted chemical vapor deposition using insulating natural diamond substrates. The diamond nature of the films was confirmed by several analytical techniques. Excellent rectifying characteristics were obtained for Au-gate Schottky diodes with homoepitaxial diamond base in the 26–583°C temperature range. Surface cleaning of the films was found to be a key step of the fabrication process.
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(90)90172-X