Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide

The growth of GaSb by MOVPE and its n-type doping using a dimethyltellurium dopant source are investigated. The results of growth rate, morphology and Te incorporation as a function of growth parameters are given. Increasing growth temperature and V/III reactant ratio were found to reduce the Te inc...

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Bibliographic Details
Published in:Journal of electronic materials 1990-02, Vol.19 (2), p.187-195
Main Authors: PASCAL, F, DELANNOY, F, BOUGNOT, J, GOUSKOV, L, BOUGNOT, G, GROSSE, P, KAOUKAB, J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The growth of GaSb by MOVPE and its n-type doping using a dimethyltellurium dopant source are investigated. The results of growth rate, morphology and Te incorporation as a function of growth parameters are given. Increasing growth temperature and V/III reactant ratio were found to reduce the Te incorporation. The lowest Hall carrier concentrations obtained at room-temperature, on p-type and n-type MOVPE GaSb are respectively: p sub(H) = 2.2 x 10 super(16) cm super(-3) with a Hall mobility of mu sub(H) = 860 cm super(2)/V.s and n sub(H) = 8.5 x 10 super(15) cm super(-3) with mu sub(H) = 3860 cm super(2)/V.s. Furthermore, Hall mobilities as high as 5000 cm super(2)/V.s were measured on n-type GaSb samples.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02651744