High resolution technology for surface acoustic wave devices monolithically integrated with electronic circuitry

The need for high-performance on-chip selectivity in electronic systems requires silicon-integrated SAW filters fabricated with high resolution technology. In this context a high resolution process for SAW devices monolithically integrated with BIFET circuitry is presented. The IC processing has bee...

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Bibliographic Details
Published in:Microelectronic engineering 1990, Vol.11 (1), p.87-91
Main Authors: van der Harg, A.J.M., Visser, J.H., van der Drift, E., Romijn, J.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The need for high-performance on-chip selectivity in electronic systems requires silicon-integrated SAW filters fabricated with high resolution technology. In this context a high resolution process for SAW devices monolithically integrated with BIFET circuitry is presented. The IC processing has been slightly modified to implement the ZnO, Al and SiO 2 layers and to align the aluminum pattern with silicon crystal orientation and electronic circuitry via Mix and Match lithography. For SAW device operation in the frequency range from 100 MHz to above 3 GHz a high resolution patterning process for the Al electrode structures was developed, including e-beam lithography, bilayer masking and dry etching. Experimental results on silicon-integrated SAW bandpass filters demonstrate the feasibility of the fabrication process.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(90)90078-8