Low-pressure chemical vapor deposition of alpha -Si sub 3 N sub 4 from SiF sub 4 and NH sub 3 : nucleation and growth characteristics

Temp. was the most dominant variable affecting coating microstructure. Strongly faceted crystalline Si sub 3 N sub 4 was deposited at > 1410 degrees C. At 1300- 1410 degrees , crystalline and amorphous phases were codeposited. The content of the crystalline phase rapidly decreased with decreased...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1992-01, Vol.75 (10), p.2803-2808
Main Authors: Lee, Woo-Y, Strife, James R, Veltri, Richard D
Format: Article
Language:English
Online Access:Get full text
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Summary:Temp. was the most dominant variable affecting coating microstructure. Strongly faceted crystalline Si sub 3 N sub 4 was deposited at > 1410 degrees C. At 1300- 1410 degrees , crystalline and amorphous phases were codeposited. The content of the crystalline phase rapidly decreased with decreased temp. In this temp. range, coating crystallinity was also influenced by kinetic factors. At approximately 1300 degrees , the coating surface appeared fully botryoidal, and coatings were mostly amorphous. Changes in the orientation and size of Si sub 3 N sub 4 crystallites were parametrically documented.
ISSN:0002-7820