Electrical measurements of bandgap shrinkage in heavily doped p-type GaAs

Electron currents injected into p super(+)-GaAs were measured by analyzing the collector current versus base-emitter voltage characteristics of n-p super(+) -n GaAs homojunction transistors. This technique facilitates accurate determination of electron injection currents for p-type GaAs doped greate...

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Bibliographic Details
Published in:Journal of electronic materials 1990, Vol.19 (1), p.7-11
Main Authors: KLAUSMEIER-BROWN, M. E, MELLOCH, M. R, LUNDSTROM, M. S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:Electron currents injected into p super(+)-GaAs were measured by analyzing the collector current versus base-emitter voltage characteristics of n-p super(+) -n GaAs homojunction transistors. This technique facilitates accurate determination of electron injection currents for p-type GaAs doped greater than 10 super(20) cm super(-3). Previous experiments used a diode-based, sequential etch technique to demonstrate that so-called bandgap shrinkage effects substantially increase the electron current injected into p super(+)-GaAs. However, the diode-based technique was limited to dopant concentrations less than or equal to 10 super(19) cm super(-3). Using the homojunction transistor-based technique described in this paper, we report a similar enhancement of the electron current injected into p-type GaAs doped as heavily as 8 x 10 super(19) cm super(-3).
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02655545